Samsung CEO Lee interested in P-RAM and Fusion Memory

P stands for Phase-Change and Fusion Memory combines the advantages of NAND and NOR flash memory technologies. The legendary South Korean Samsung jaebol chongsoo Lee Gun-Hee listened to Hwang Chang-Gyoo, chief of Samsung memory division for half an hour on Oct. 10. P-RAM is said to have 1,000 times faster response times than conventional flash memory in which Intel is the world’s largest manufacturer.

Source: Digital Times, South Korea

Originally posted by Kenshin
The legendary South Korean Samsung jaebol chongsoo Lee Gun-Hee

Legendary jaebol chongsoo? :slight_smile:

For what purposes would this memory be used? For new digitcal cameras with higher resolutions (or low compression), to keep writing times in place? Or maybe for PDA systems that run on flash memory?